* VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdso.

General Features
* VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
* Special process technology for .

The NCE7190H uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 71V,ID =90A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.9mΩ)
* Speci.

NCE7190

NCE7190A

NCE7075

NCE7075K

NCE7080

NCE70N100I

NCE70R180

NCE70R180F

NCE70R1K2

NCE70R1K2D

NCE70R1K2F

NCE70R1K2I

NCE70R1K2K